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High power S band limiter simulation with a physics-based accurate nonlinear PIN diode model, E. Gatard, R. Sommet P. Bouysse, et al., European Microwave integrated circuit conference, Oct. 2007, pp 72-75

An improved Physics-Based Formulation of the Microwave p-i-n Diode Impedance, E. Gatard, P. Bouysse, R. Sommet and R. Quere, Microwave and Wireless Components Letters, IEEE vol.17, issue 3, March 2007, pp 211- 213

A Physics-Based Nonlinear Model of Microwave P-I-N Diode for CAD, E. Gatard, P. Bouysse, R. Sommet et al., 1st European Microwave Integrated Circuits Conference, Sept. 2006, pp 285 - 288