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A new nonlinear HEMT model allowing accurate simulation of very low IM3 levels for high-frequency highly linear amplifiers design, J. Lhortolary, C. Chang, T. Reveyrand et al., Microwave Symposium 2007 IEEE MTT-S International, June 2007, pp.589-592

Nonlinear Thermal Reduced Model for Power Semiconductor Devices, E. Gatard, R. Sommet and R. Quere, Thermal and Thermomechanical Phenomena in Electronics Systems, 2006 ITHERM, May-June 2006, pp 638-644

A new non-linear electrothermal 3D spline model with charge integration for power FETs, C. Lagarde, J.P. Teyssier, P. Bouysse et al., 2005 European Microwave Conference, vol. 2, 4-6 Oct. 2005

Modeling of a 4-18GHz 6W flip-chip integrated power amplifier based on GaN HEMTs technology, S. De Meyer, A. Philippon, M. Campovecchio et al., 2005 European Microwave Conference, vol. 3, 4-6 Oct. 2005

A New Nonlinear Capacitance Model of Millimeter Wave Power PHEMT for Accurate AM/AM–AM/PM Simulations, S. Forestier, T. Gasseling, Ph. Bouysse, R. Quere and J.M. Nebus, IEEE Microwave and Wireless Components Letters, Vol. 14, n°1, pp. 43-45, January 2004