> Post the 26 April 2010
The Microwave and Millimeter-Wave Section of the RF Payload Systems Division (Directorate of Technical and Quality Management at ESA-ESTEC) is organizing a Workshop on Microwave Technology and Techniques. The Workshop will be held on May 10–12, 2010 at the European Space Research and Technology Centre (ESTEC) in Noordwijk, the Netherlands.
AMCAD is presenting a paper on May 11, 12:00 – 12:25 “A Non Linear Distributed Model of High Power AlGaN/GaN HEMT Devices Dedicated to Multi-fingers and Large Periphery Transistors”. This paper presents a fully distributed model of FET. This model was especially developed for multi-fingers and large periphery devices in order to reach more accuracy than usual models. The developed model was validated through pulsed I(V), pulsed S parameters and load pull measurements. Results between usual models and the new distributed model are compared to highlight improvements reached with such modelling.
AMCAD is also presenting state-of-the-art FET modeling solution through its new IVCAD’ modeling plug-in which is a dedicated tool to extract accurate linear and non-linear compact measurement based models of field effect transistors (FET). This plug-in address all FET devices (MESFETs, HEMTs, LDMOS) on gallium arsenide (GaAs), gallium nitride (GaN), as well as many other technologies such as indium phosphide (InP) or silicium (Si).
This software tool allows model parameters extraction and optimization, graphical display of obtained results, and direct link to the main commercial simulators. This software tool is fully compatible with AMCAD’ pulsed IV/RF setups.