IVCAD Modeling System

In a unified measurement and modeling environment, accurate and efficient model parameter extraction can be performed from pulsed IV and pulsed RF measurements, and validated through dedicated Load-Pull measurements.
This modeling system address all FET devices (MESFETs, HEMTs, LDMOS) on gallium arsenide (GaAs), gallium nitride (GaN), as well as many other technologies such as indium phosphide (InP) or silicium (Si).

Pulsed IV/RF system
Thermal related performance issues rise with the total power dissipation within a transistor, causing large errors in nonlinear models for high power devices based only on static DC measurements.

The pulse operating conditions are used to control the thermal state of the component under test, as well as for testing the device in critical areas, where continuous measurements often leads to the device destruction.
The high DC power handling capability of the pulsed setup developed and used by AMCAD Engineering is critical for the modeling of high power transistors. The pulsed voltage can be up to 240V, and pulsed current up to +30A. Pulse width down to 200ns for low power.

Load-Pull for Model Validation system
Because transistor nonlinear model developments require specific measurements, AMCAD has developed a new LPMV (Load-Pull for Model Validation) solution in order to cover such needs. The aim is to better determine the intrinsic characteristics of the transistor rather than the performances of the transistor associated to specific operating conditions given by the measurement setup.
LPMV system makes data such as transistor’ input reflexion coefficient, PAE, net power gain, and true AM/PM available for DUT knowledge and model validation.