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An Electrothermal Model for AlGaN/GaN Power HEMTs Including Trapping Effects to Improve Large-Signal Simulation Results on High VSWR, O. Jardel, F. De Groote, T. Reveyrand et al., IEEE Transactions on Microwave Theory and Techniques, vol. 55, Issue 12, part 2, Dec. 2007, pp 2660-2669

A Drain-Lag Model for AlGaN/GaN Power HEMTs, O. Jardel, F. De Groote, C. Charbonniaud et al., Microwave Symposium 2007 IEEE MTT-S International, June 2007, pp.601-604

Power Performance Evaluation of AlGaN/GaN HEMTs through Load Pull and Pulsed I-V Measurements, C. Charbonniaud, T. Gasseling, S. De Meyer et al., 2004 Gallium Arsenide Applications Symposium, October 2004, Amsterdam

Electrothermal and trapping effects characterization of AlGaN/GaN HEMTs, C. Charbonniaud, S. De Meyer, R. Quere and J.P. Teyssier, 2003 European Microwave Conference, October 6-7, 2003 Munich

Mechanism of power density degradation due to trapping effects in AlGaN/GaN HEMTs, S. De Meyer, C. Charbonniaud, R. Quere et al., IEEE MTT Symposium Digest, vol. 1, pp. 455-458, June 2003