Pulsed IV Systems
AMCAD Engineering’s PIV/PLP Family of Pulsed IV Systems

Click here to download the datasheet (pdf 1855Ko)

 
AMCAD Engineering has created professional, industry-proven pulsing technology for both standalone IV-testing as well as pulsed-bias load pull applications. Systems come fully equipped with a common 19” rack mountable mainframe controller which includes five integrated power supplies. Pulse heads are selected for the specific application and are available in 120V/30A and 250V/10A models.

Key Features
 * 250V/ 10A or 120V/30A pulse generation
 * Pulse width down to 200ns
 * High precision current and voltage measurement
 * Synchronized pulsed S-parameter measurements
 * Embedded fast short-circuit current breaker, performing the protection of the internal probe circuitry at device breakdown
 * Automatic probe calibration procedure
 * Embedded fast measurement samplers:
 * fast average and ripple acquisition for highest signal to noise ratio, 16 bit compliant:
 o Pulse shape monitoring equivalent to a 50Msample/s scope, 8 bit resolution
 o Fast acquisition of a complete power sweep, useful for Load Pull test bench
 * Pulse and measurement clocks are both available in stand alone or external triggered mode
 * Set of resistive network to improve measurement accuracy.

AMCAD Engineering develops and markets pulsed IV/RF caracterization systems which are versatile, robust and accurate.

These caracterization systems are dedicated to:

- Semiconductor technology development

- Device reliability and lifetime testing

- Semiconductor device modeling

Pulsed IV measurements to highlight complex phenomena
Pulsed IV measurement system allows quasi-isothermal and trapping-free characterization of semiconductor devices. This system highlights self-heating and thermal behaviour of semiconductor devices, as well as trapping effects.
Moreover, thanks to pulsed conditions, devices can be characterized with minimum risk of destruction, even in critical area of high power dissipation.

Pulsed IV/RF measurements to develop accurate models
Thermal related performances are challenged by the total power dissipation within a transistor, causing large errors in non-linear models for high power devices based only on static DC measurements. Performing pulsed IV and [S] parameter measurements is a real asset to build accurate electro-thermal non-linear models.