- Extract accurate linear and non-linear compact measurement based models
- Dedicated to GaN FET
- Model parameter extraction from Pulsed IV/RF measurements
- Most direct links to commercial simulators

- Integrated in IVCAD platform with user–friendly and intuitive graphical user interface (GUI)
- Dedicated extraction solution for original AMCAD’s FET models, improving model accuracy
- Model extraction process based on AMCAD pulsed IV/RF measurements system
- Developed by modeling engineers involved every day in GaAs or GaN FETs model development, ensuring perfect fit to technologies enhancements and RF power applications requirements
- Extracted models are easy to use, understandable, exhibit very good convergence in commercial simulators, enabling fast simulations. They are accurate in DC and RF domain, from linear to highly nonlinear operating conditions.
- They are completes, they include self-heating phenomena, dynamic thermal behaviour and trapping effects.
- They are versatile, usable for HB, multi-tone and transient analyses.