Packaged transistors.
In addition with X-parameter measurement and modelling services using Agilent solution, AMCAD provides dedicated behavioural models of both packaged and unmatched transistors and 50 Ohms power circuits.
An electrical equivalent scheme of a packaged transistor could require up to several months of development. The whole model should include the die model associated to bonding model and the package model, which is very time consuming and costly in terms of development.
Using behavioral transistor model for hybrid PAs development is the best way in order to optimize and accelerate your circuit design flow. Indeed, the order of magnitude to develop an accurate behavioural model of packaged transistor is less than 1 or 2 weeks, including the measurement work.
These models are extracted from time domain RF and microwave measurements in a load pull environment. IVCAD is the software platform which drives the Nonlinear Network Analyser as well as the tuners. needed for such model extraction Because these models include memory effects, they can be used for wideband amplifier design, or for simulation of narrow band amplifier using complex signal modulations. Comparison between simulations and amplifier measurements leads to typical error of 3 points and 0.3dB for PAE and Pour performances over the full bandwidth.
Several behavioural models can be provided, as a function of the target and tradeoffs that needed to be addressed during the simulation work.